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SIR870ADP-T1-RE3 Vishay / Siliconix
*For representation only.

SIR870ADP-T1-RE3

Mfr. No: SIR870ADP-T1-RE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs 100V Vds 20V Vgs PowerPAK SO-8
Datasheet: SIR870ADP-T1-RE3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2866 pF @ 50 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,975
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541100090
USHTS 8541290065
JPHTS 854110090
KRHTS 8541109000
MXHTS 8541100101
ECCN EAR99
ℹ Product Overview

Manufactured by Vishay / Siliconix, the SIR870ADP-T1-RE3 is classified under mosfets. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 60A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 6.6mOhm @ 20A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get SIR870ADP-T1-RE3 from Simplytronix, shipped same day with a genuine parts guarantee.

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