| Mfr. No: | SIS110DN-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 14.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 24W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
As a mosfets component, the SIS110DN-T1-GE3 is manufactured and supplied by Vishay / Siliconix. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 5.2A (Ta), 14.2A (Tc), drive voltage: 7.5V, 10V and rds on (max) @ id, vgs: 54mOhm @ 4A, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix carries SIS110DN-T1-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.