*For representation only.
SIS9634LDN-T1-GE3
| Mfr. No: | SIS9634LDN-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs PPAK1212 2NCH 60V 6A |
| Datasheet: | SIS9634LDN-T1-GE3 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 30V |
| Power - Max | 2.5W (Ta), 17.9W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,762
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
SIS9634LDN-T1-GE3 is a mosfets part produced by Vishay / Siliconix for use across a range of applications. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 6A (Ta), 6A (Tc) and rds on (max) @ id, vgs: 31mOhm @ 5A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SIS9634LDN-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.
