| Mfr. No: | SISS60DN-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs PPAK1212 N-CH 30V 50.1A |
| Datasheet: | SISS60DN-T1-GE3 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 50.1A (Ta), 181.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.31mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 85.5 nC @ 10 V |
| Vgs (Max) | +16V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds | 3960 pF @ 15 V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S |
| Package / Case | PowerPAK® 1212-8S |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
SISS60DN-T1-GE3 is a mosfets part produced by Vishay / Siliconix for use across a range of applications. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 50.1A (Ta), 181.8A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 1.31mOhm @ 20A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SISS60DN-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.