*For representation only.
SIZ342BDT-T1-GE3
| Mfr. No: | SIZ342BDT-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs PPAIR3X3 2NCH 30V 15.4A |
| Lifecycle: | Active |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel, Common Source (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15.4A (Ta), 32.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.65mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 15V |
| Power - Max | 3.7W (Ta), 16.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-Power33 (3x3) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,861
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 88 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Vishay / Siliconix manufactures the SIZ342BDT-T1-GE3, a mosfets part used in electronic assemblies. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel, Common Source (Half Bridge), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 15.4A (Ta), 32.9A (Tc) and rds on (max) @ id, vgs: 9.65mOhm @ 10A, 10V. This part has a typical lead time of 88 Days from factory. You can source SIZ342BDT-T1-GE3 through Simplytronix, with fast shipping and verified authenticity.
