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SIZ988DT-T1-GE3 Vishay / Siliconix
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SIZ988DT-T1-GE3

Mfr. No: SIZ988DT-T1-GE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5
Lifecycle: Active
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 4.5V, 23.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V, 2425pF @ 15V
Power - Max 20.2W, 40W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair®
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,979
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Vishay / Siliconix manufactures the SIZ988DT-T1-GE3, a mosfets part used in electronic assemblies. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 40A (Tc), 60A (Tc), rds on (max) @ id, vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V and vgs(th) (max) @ id: 2.4V @ 250µA, 2.2V @ 250µA. This part has a typical lead time of 0 Days from factory. You can source SIZ988DT-T1-GE3 through Simplytronix, with fast shipping and verified authenticity.

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