*For representation only.
SIZF920DT-T1-GE3
| Mfr. No: | SIZF920DT-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs Dual 30V Vds PowerPAIR 6x5F |
| Lifecycle: | Last Time Buy |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual), Schottky |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V, 125nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 15V, 5230pF @ 15V |
| Power - Max | 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
10,105
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The SIZF920DT-T1-GE3 from Vishay / Siliconix falls under the mosfets category. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), Schottky, FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) and rds on (max) @ id, vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V. This part has a typical lead time of 0 Days from factory. SIZF920DT-T1-GE3 is available through Simplytronix, sourced and verified for authenticity.
