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SQ1539EH-T1_GE3 Vishay / Siliconix
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SQ1539EH-T1_GE3

Mfr. No: SQ1539EH-T1_GE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs N Ch 30Vds 20Vgs AEC-Q101 Qualified
Lifecycle: Active
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 850mA (Tc)
Rds On (Max) @ Id, Vgs 280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V, 1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 48pF @ 15V, 50pF @ 15V
Power - Max 1.5W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,552
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Vishay / Siliconix's SQ1539EH-T1_GE3 is a widely used mosfets part in electronic designs. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: N and P-Channel, FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 850mA (Tc) and rds on (max) @ id, vgs: 280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix supplies SQ1539EH-T1_GE3 with same-day shipping and guaranteed authenticity.

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