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SQ1902AEL-T1_GE3 Vishay / Siliconix
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SQ1902AEL-T1_GE3

Mfr. No: SQ1902AEL-T1_GE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
Datasheet: SQ1902AEL-T1_GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 780mA (Tc)
Rds On (Max) @ Id, Vgs 415mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 10V
Power - Max 430mW
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,950
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 19 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

SQ1902AEL-T1_GE3 is a mosfets component manufactured by Vishay / Siliconix. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 780mA (Tc) and rds on (max) @ id, vgs: 415mOhm @ 660mA, 4.5V. This part has a typical lead time of 19 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SQ1902AEL-T1_GE3 in stock, verified authentic and ready for same-day dispatch.

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