*For representation only.
SQ1912AEEH-T1_GE3
| Mfr. No: | SQ1912AEEH-T1_GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified |
| Lifecycle: | Active |
⚙
Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.25nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 10V |
| Power - Max | 1.5W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,037
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8542390000 |
| USHTS | 8541290065 |
| TARIC | 8541210000 |
| MXHTS | 8542399901 |
| ECCN | EAR99 |
ℹ
Product Overview
The SQ1912AEEH-T1_GE3 from Vishay / Siliconix falls under the mosfets category. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 800mA (Tc) and rds on (max) @ id, vgs: 280mOhm @ 1.2A, 4.5V. This part has a typical lead time of 0 Days from factory. SQ1912AEEH-T1_GE3 is available through Simplytronix, sourced and verified for authenticity.
