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SQ2315ES-T1_BE3 Vishay / Siliconix
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SQ2315ES-T1_BE3

Mfr. No: SQ2315ES-T1_BE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs P-CHANNEL 12V (D-S)
Lifecycle: Active
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 6 V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging SQ2315ES-T1_GE3
Suggested Replacement
9,923
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

As a mosfets component, the SQ2315ES-T1_BE3 is manufactured and supplied by Vishay / Siliconix. Key specifications include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 12 V, current, continuous drain (id) @ 25°C: 5A (Tc), drive voltage: 1.8V, 4.5V and rds on (max) @ id, vgs: 50mOhm @ 3.5A, 4.5V. This part has a typical lead time of 0 Days from factory. Simplytronix carries SQ2315ES-T1_BE3 in stock, backed by a genuine parts guarantee and quick dispatch.

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