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SQ4080EY-T1_GE3 Vishay / Siliconix
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SQ4080EY-T1_GE3

Mfr. No: SQ4080EY-T1_GE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs N-Channel 150V SO-8
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1590 pF @ 75 V
FET Feature -
Power Dissipation (Max) 7.1W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging SQ4080EY-T1_BE3
Suggested Replacement SQ4080EY-T1_BE3
6,280
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The SQ4080EY-T1_GE3 from Vishay / Siliconix falls under the mosfets category. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 150 V, current, continuous drain (id) @ 25°C: 18A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 85mOhm @ 10A, 10V. This part has a typical lead time of 0 Days from factory. SQ4080EY-T1_GE3 is available through Simplytronix, sourced and verified for authenticity.

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