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SQD23N06-31L_GE3 Vishay / Siliconix
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SQD23N06-31L_GE3

Mfr. No: SQD23N06-31L_GE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs 60V 23A 100W AEC-Q101 Qualified
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 845 pF @ 25 V
FET Feature -
Power Dissipation (Max) 37W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,317
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 43 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

SQD23N06-31L_GE3 is a mosfets component manufactured by Vishay / Siliconix. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 23A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 31mOhm @ 15A, 10V. This part has a typical lead time of 43 Days from factory. Simplytronix offers SQD23N06-31L_GE3 in stock, verified authentic and ready for same-day dispatch.

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