| Mfr. No: | SQJ262EP-T1_GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs Dual 60V Vds Asymtrc AEC-Q101 Qualified |
| Lifecycle: | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V, 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V, 1260pF @ 25V |
| Power - Max | 27W (Tc), 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541109000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
As a mosfets component, the SQJ262EP-T1_GE3 is manufactured and supplied by Vishay / Siliconix. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 15A (Tc), 40A (Tc) and rds on (max) @ id, vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix carries SQJ262EP-T1_GE3 in stock, backed by a genuine parts guarantee and quick dispatch.