| Mfr. No: | SQJ912BEP-T1_GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs Dual N-Ch 40V AEC-Q101 Qualified |
| Datasheet: | SQJ912BEP-T1_GE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
| Power - Max | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 23 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
The SQJ912BEP-T1_GE3, made by Vishay / Siliconix, belongs to the mosfets product category. This component is defined by technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 30A (Tc) and rds on (max) @ id, vgs: 11mOhm @ 9A, 10V. This part has a typical lead time of 23 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SQJ912BEP-T1_GE3 for same-day shipping with genuine parts guaranteed.