| Mfr. No: | SQS660CENW-T1_GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET |
| Datasheet: | SQS660CENW-T1_GE3 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8W |
| Package / Case | PowerPAK® 1212-8W |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 210 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Vishay / Siliconix manufactures the SQS660CENW-T1_GE3, a mosfets part used in electronic assemblies. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 18A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 11.2mOhm @ 7A, 10V. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. You can source SQS660CENW-T1_GE3 through Simplytronix, with fast shipping and verified authenticity.