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SUD35N10-26P-BE3 Vishay / Siliconix
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SUD35N10-26P-BE3

Mfr. No: SUD35N10-26P-BE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs TO252 100V 35A N-CH MOSFET
Lifecycle: Last Time Buy
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 12 V
FET Feature -
Power Dissipation (Max) 8.3W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging SUD35N10-26P-E3
Suggested Replacement
11,117
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

The SUD35N10-26P-BE3, made by Vishay / Siliconix, belongs to the mosfets product category. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 12A (Ta), 35A (Tc), drive voltage: 7V, 10V and rds on (max) @ id, vgs: 26mOhm @ 12A, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix stocks SUD35N10-26P-BE3 for same-day shipping with genuine parts guaranteed.

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