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2N7002-T1-E3 Vishay / Siliconix
*For representation only.

2N7002-T1-E3

Mfr. No: 2N7002-T1-E3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs 60V 0.115A 0.2W
Lifecycle: Obsolete
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
FET Feature -
Power Dissipation (Max) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,927
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
TARIC 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The 2N7002-T1-E3 from Vishay / Siliconix falls under the mosfets category. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 115mA (Ta), drive voltage: 5V, 10V and rds on (max) @ id, vgs: 7.5Ohm @ 500mA, 10V. This part has a typical lead time of 0 Days from factory. 2N7002-T1-E3 is available through Simplytronix, sourced and verified for authenticity.

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