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IRF9Z30PBF-BE3 Vishay / Siliconix
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IRF9Z30PBF-BE3

Mfr. No: IRF9Z30PBF-BE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs TO220 P-CH 50V 18A
Lifecycle: Active
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IRF9Z30PBF
Suggested Replacement
12,599
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

Vishay / Siliconix's IRF9Z30PBF-BE3 is a widely used mosfets part in electronic designs. Technical specifications for this part include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 50 V, current, continuous drain (id) @ 25°C: 18A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 140mOhm @ 9.3A, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix supplies IRF9Z30PBF-BE3 with same-day shipping and guaranteed authenticity.

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