*For representation only.
IRFR210PBF-BE3
| Mfr. No: | IRFR210PBF-BE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs TO252 200V 2.6A N-CH MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 3000 |
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Alternate / Replacement Parts
| Alternate Packaging | IRFR210PBF |
| Suggested Replacement |
10,578
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 288 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Vishay / Siliconix manufactures the IRFR210PBF-BE3, a mosfets part used in electronic assemblies. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 200 V, current, continuous drain (id) @ 25°C: 2.6A (Tc), rds on (max) @ id, vgs: 1.5Ohm @ 1.6A, 10V and vgs(th) (max) @ id: 4V @ 250µA. This part has a typical lead time of 288 Days from factory. You can source IRFR210PBF-BE3 through Simplytronix, with fast shipping and verified authenticity.
