*For representation only.
SISF06DN-T1-GE3
| Mfr. No: | SISF06DN-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs Dual N-Ch 30V(S1-S2) |
| Lifecycle: | Active |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 101A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 15V |
| Power - Max | 5.2W (Ta), 69.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SCD |
| Supplier Device Package | PowerPAK® 1212-8SCD |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,272
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
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Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Vishay / Siliconix, the SISF06DN-T1-GE3 is classified under mosfets. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual) Common Drain, FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 28A (Ta), 101A (Tc) and rds on (max) @ id, vgs: 4.5mOhm @ 7A, 10V. This part has a typical lead time of 0 Days from factory. Get SISF06DN-T1-GE3 from Simplytronix, shipped same day with a genuine parts guarantee.
