| Mfr. No: | SIZF906DT-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs 30V Vds 20V Vgs PowerPAIR F 6 x 5 |
| Lifecycle: | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V, 92nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 15V, 8200pF @ 15V |
| Power - Max | 38W (Tc), 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Manufactured by Vishay / Siliconix, the SIZF906DT-T1-GE3 is classified under mosfets. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 60A (Tc) and rds on (max) @ id, vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V. This part has a typical lead time of 0 Days from factory. Get SIZF906DT-T1-GE3 from Simplytronix, shipped same day with a genuine parts guarantee.