*For representation only.
SI1965DH-T1-BE3
| Mfr. No: | SI1965DH-T1-BE3 |
| Mfr.: | Vishay |
| Category: | MOSFETs |
| Description: | MOSFETs SOT363 2PCH 12V 1.14A |
| Datasheet: | SI1965DH-T1-BE3 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.14A (Ta), 1.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 6V |
| Power - Max | 740mW (Ta), 1.25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
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Alternate / Replacement Parts
| Alternate Packaging | SI1965DH-T1-GE3 |
| Suggested Replacement |
8,899
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
The SI1965DH-T1-BE3, made by Vishay, belongs to the mosfets product category. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 P-Channel (Dual), FET feature: -, drain to source voltage: 12V, current, continuous drain (id) @ 25°C: 1.14A (Ta), 1.3A (Tc) and rds on (max) @ id, vgs: 390mOhm @ 1A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SI1965DH-T1-BE3 for same-day shipping with genuine parts guaranteed.
