| Mfr. No: | BUJ100,412 |
| Mfr.: | WeEn Semiconductors |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Trans GP BJT NPN 400V 1A 3-Pin SPT |
| Datasheet: | BUJ100,412 Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 150mA, 750mA |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 9 @ 750mA, 5V |
| Power - Max | 2 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Packaging | |
| Standard Pack Qty | 5000 |
| Alternate Packaging | BUJ100,126 |
| Suggested Replacement |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
WeEn Semiconductors's BUJ100,412 is a widely used transistors part in electronic designs. Key specifications include transistor type: NPN, current, collector (ic): 1 A, voltage, collector emitter breakdown: 400 V, vce saturation (max) @ ib, ic: 1V @ 150mA, 750mA, current, collector cutoff: 100µA and DC current gain (hfe) (min) @ ic, vce: 9 @ 750mA, 5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies BUJ100,412 with same-day shipping and guaranteed authenticity.