| Mfr. No: | PHE13005,127 |
| Mfr.: | WeEn Semiconductors |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT RAIL BIPOLAR |
| Datasheet: | PHE13005,127 Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 5V |
| Power - Max | 75 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Packaging | |
| Standard Pack Qty | 1000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
PHE13005,127 is a bipolar transistors - bjt part produced by WeEn Semiconductors for use across a range of applications. Technical specifications for this part include transistor type: NPN, current, collector (ic): 4 A, voltage, collector emitter breakdown: 400 V, vce saturation (max) @ ib, ic: 1V @ 1A, 4A, current, collector cutoff: 100µA and DC current gain (hfe) (min) @ ic, vce: 10 @ 2A, 5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Order PHE13005,127 from Simplytronix for authenticated stock and same-day order processing.