| Mfr. No: | WNSC10650T6J |
| Mfr.: | WeEn Semiconductors |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes WNSC10650T/DFN8X8/REEL 13\" Q1/T1 *STANDARD MARK SMD |
| Lifecycle: | Obsolete |
| Datasheet: | WNSC10650T6J Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C (Max) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100199 |
| BRHTS | 85411099 |
| ECCN | EAR99 |
WNSC10650T6J is a sic schottky diodes part produced by WeEn Semiconductors for use across a range of applications. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 10A, voltage, forward (vf) (max) @ if: 1.7 V @ 10 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order WNSC10650T6J from Simplytronix for authenticated stock and same-day order processing.