| Mfr. No: | WNSC5D10650B6J |
| Mfr.: | WeEn Semiconductors |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes WNSC5D10650B/TO263/REEL 13\" Q1/T1 *STANDARD MARK SMD |
| Lifecycle: | Active |
| Datasheet: | WNSC5D10650B6J Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 323pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 168 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
Manufactured by WeEn Semiconductors, the WNSC5D10650B6J is classified under sic schottky diodes. Key specifications include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 10A, voltage, forward (vf) (max) @ if: 1.7 V @ 10 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 168 Days from factory and ships with a full manufacturer datasheet available for download. Get WNSC5D10650B6J from Simplytronix, shipped same day with a genuine parts guarantee.