*For representation only.
NXPSC046506Q
| Mfr. No: | NXPSC046506Q |
| Mfr.: | WeEn Semiconductors |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes NXPSC046506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK |
| Lifecycle: | Obsolete |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
8,737
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
The NXPSC046506Q, made by WeEn Semiconductors, belongs to the sic schottky diodes product category. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 4A, voltage, forward (vf) (max) @ if: 1.7 V @ 4 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 0 Days from factory. Simplytronix stocks NXPSC046506Q for same-day shipping with genuine parts guaranteed.
