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WNSC10650T6J WeEn Semiconductors
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WNSC10650T6J

Mfr. No: WNSC10650T6J
Mfr.: WeEn Semiconductors
Category: SiC Schottky Diodes
Description: SiC Schottky Diodes WNSC10650T/DFN8X8/REEL 13\" Q1/T1 *STANDARD MARK SMD
Lifecycle: Obsolete
Datasheet: WNSC10650T6J Datasheet (PDF)
⚙ Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V
Capacitance @ Vr, F 328pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Supplier Device Package 5-DFN (8x8)
Operating Temperature - Junction 175°C (Max)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,387
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100199
BRHTS 85411099
ECCN EAR99
ℹ Product Overview

WNSC10650T6J is a sic schottky diodes part produced by WeEn Semiconductors for use across a range of applications. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 10A, voltage, forward (vf) (max) @ if: 1.7 V @ 10 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order WNSC10650T6J from Simplytronix for authenticated stock and same-day order processing.

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