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C2M1000170J-TR Wolfspeed
*For representation only.

C2M1000170J-TR

Mfr. No: C2M1000170J-TR
Mfr.: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs SIC MOSFET 1700V RDS ON 1 Ohm
Lifecycle: Obsolete
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging C2M1000170J
Suggested Replacement C4D02120E
6,623
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
BRHTS 85414011
ECCN EAR99
ℹ Product Overview

As a sic mosfets component, the C2M1000170J-TR is manufactured and supplied by Wolfspeed. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 5.3A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 1.4Ohm @ 2A, 20V. This part has a typical lead time of 0 Days from factory. Simplytronix carries C2M1000170J-TR in stock, backed by a genuine parts guarantee and quick dispatch.

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