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C3M0040120J2-TR Wolfspeed
*For representation only.

C3M0040120J2-TR

Mfr. No: C3M0040120J2-TR
Mfr.: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs SiC, MOSFET, 40mO, 1200V, TO-263-7 XL T&R, Industrial
Datasheet: C3M0040120J2-TR Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 53mOhm @ 31.9A, 15V
Vgs(th) (Max) @ Id 3.8V @ 8.77mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 2726 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 294W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,084
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The C3M0040120J2-TR from Wolfspeed falls under the sic mosfets category. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 63A (Tc), drive voltage: 15V and rds on (max) @ id, vgs: 53mOhm @ 31.9A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. C3M0040120J2-TR is available through Simplytronix, sourced and verified for authenticity.

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