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C3M0280090J Wolfspeed
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C3M0280090J

Mfr. No: C3M0280090J
Mfr.: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs G3 SiC MOSFET 900V, 280 mOhm
Datasheet: C3M0280090J Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 15 V
Vgs (Max) +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 600 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging C3M0280090J-TR
Suggested Replacement
5,201
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Wolfspeed manufactures the C3M0280090J, a sic mosfets part used in electronic assemblies. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 900 V, current, continuous drain (id) @ 25°C: 11A (Tc), drive voltage: 15V and rds on (max) @ id, vgs: 360mOhm @ 7.5A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source C3M0280090J through Simplytronix, with fast shipping and verified authenticity.

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