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E4M0015075K1 Wolfspeed
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E4M0015075K1

Mfr. No: E4M0015075K1
Mfr.: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs SiC, MOSFET, 15mO, 750V, TO-247-4, Automotive, Gen4
Datasheet: E4M0015075K1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain (Id) @ 25°C 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id 3.8V @ 15.4mA
Gate Charge (Qg) (Max) @ Vgs 191 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 5128 pF @ 500 V
FET Feature -
Power Dissipation (Max) 372W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
📦 Product Attributes
Packaging
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,825
Units In Stock
📦
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 35 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by Wolfspeed, the E4M0015075K1 is classified under sic mosfets. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 750 V, current, continuous drain (id) @ 25°C: 128A (Tc), drive voltage: 15V and rds on (max) @ id, vgs: 21mOhm @ 55.8A, 15V. This part has a typical lead time of 35 Days from factory and ships with a full manufacturer datasheet available for download. Get E4M0015075K1 from Simplytronix, shipped same day with a genuine parts guarantee.

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