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| Mfr. No: | E4MS009120K |
| Mfr.: | Wolfspeed |
| Description: | SiC, MOSFET, 9mO, 1200V, TO-247-4, Automotive, Gen4 |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 203A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 3.9V @ 30.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 18 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8585 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 714W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
| Packaging | |
| Standard Pack Qty | 30 |
| Category | |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290085 |
| ECCN | EAR99 |
The E4MS009120K from Wolfspeed falls under the component category. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 203A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 11.7mOhm @ 100A, 18V. This part has a typical lead time of 0 Days from factory. E4MS009120K is available through Simplytronix, sourced and verified for authenticity.
