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CBB011M12GM4T Wolfspeed
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CBB011M12GM4T

Mfr. No: CBB011M12GM4T
Mfr.: Wolfspeed
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules SiC, Module, 11mO, 1200V, 48 mm, GM4 Full-Bridge, Industrial, Pre-Applied TIM
Lifecycle: Active
Datasheet: CBB011M12GM4T Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Full Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Rds On (Max) @ Id, Vgs 14.9mOhm @ 100A, 15V
Vgs(th) (Max) @ Id 4V @ 28mA
Gate Charge (Qg) (Max) @ Vgs 405nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 10.1pF @ 800V
Power - Max 292W (Tj)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging
Standard Pack Qty 18
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,266
Units In Stock
📦
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant By Exemption
Lifecycle New Product
Lead Time 88 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

CBB011M12GM4T is a discrete semiconductor modules part produced by Wolfspeed for use across a range of applications. This component is defined by technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 100A (Tj) and rds on (max) @ id, vgs: 14.9mOhm @ 100A, 15V. This part has a typical lead time of 88 Days from factory and ships with a full manufacturer datasheet available for download. Order CBB011M12GM4T from Simplytronix for authenticated stock and same-day order processing.

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