*For representation only.
WAS530M12BM3
| Mfr. No: | WAS530M12BM3 |
| Mfr.: | Wolfspeed |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules BM3, 1200V, 530A SiCHalf-Bridge Module |
| Lifecycle: | Active |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 630A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.47mOhm @ 530A, 15V |
| Vgs(th) (Max) @ Id | 3.6V @ 127mA |
| Gate Charge (Qg) (Max) @ Vgs | 1362nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 38900pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 1 |
6,433
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
As a discrete semiconductor modules component, the WAS530M12BM3 is manufactured and supplied by Wolfspeed. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 630A (Tc) and rds on (max) @ id, vgs: 3.47mOhm @ 530A, 15V. This part has a typical lead time of 0 Days from factory. Simplytronix carries WAS530M12BM3 in stock, backed by a genuine parts guarantee and quick dispatch.
