*For representation only.
GD2X30MPS12D
| Mfr. No: | GD2X30MPS12D |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200V 60A TO-247-3 SiC Schottky MPS |
| Lifecycle: | Active |
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Specifications
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 55A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
9,278
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
The GD2X30MPS12D from GeneSiC Semiconductor falls under the sic schottky diodes category. This component is defined by diode configuration: 1 Pair Common Cathode, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified (io): 55A (DC), voltage, forward (vf) (max) @ if: 1.8 V @ 30 A and speed: Fast Recovery =< 500ns, > 200mA (Io). This part has a typical lead time of 154 Days from factory. GD2X30MPS12D is available through Simplytronix, sourced and verified for authenticity.
