| Mfr. No: | GD2X60MPS06N |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 650V 120A SOT-227 SiC Schottky MPS |
| Lifecycle: | Active |
| Datasheet: | GD2X60MPS06N Datasheet (PDF) |
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) (per Diode) | 70A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Packaging | Tube |
| Standard Pack Qty | 10 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541590000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
GeneSiC Semiconductor's GD2X60MPS06N is a widely used sic schottky diodes part in electronic designs. Notable characteristics of this part include diode configuration: 2 Independent, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified (io): 70A (DC), voltage, forward (vf) (max) @ if: 1.8 V @ 60 A and speed: No Recovery Time > 500mA (Io). This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies GD2X60MPS06N with same-day shipping and guaranteed authenticity.