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G3F17MT12FB2-T GeneSiC Semiconductor
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G3F17MT12FB2-T

Mfr. No: G3F17MT12FB2-T
Mfr.: GeneSiC Semiconductor
Category: MOSFET Modules
Description: MOSFET Modules 1200V 17mohm Half-Bridge SiCPAK F SiC Module, TIM
Lifecycle: Active
Datasheet: G3F17MT12FB2-T Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Rds On (Max) @ Id, Vgs 23mOhm @ 52A, 18V
Vgs(th) (Max) @ Id 4.3V @ 36mA
Gate Charge (Qg) (Max) @ Vgs 204nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 800V
Power - Max 170W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package SiCPAK F
📦 Product Attributes
Packaging Tray
Standard Pack Qty 48
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,640
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by GeneSiC Semiconductor, the G3F17MT12FB2-T is classified under mosfet modules. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 68A (Tc) and rds on (max) @ id, vgs: 23mOhm @ 52A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Get G3F17MT12FB2-T from Simplytronix, shipped same day with a genuine parts guarantee.

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