| Mfr. No: | G3F18MT12FB4 |
| Mfr.: | GeneSiC Semiconductor |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1200V 18mohm Full-Bridge SiCPAK F SiC Module |
| Lifecycle: | Active |
| Datasheet: | G3F18MT12FB4 Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 45A, 18V |
| Vgs(th) (Max) @ Id | 4.3V @ 35mA |
| Gate Charge (Qg) (Max) @ Vgs | 196nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 4925pF @ 800V |
| Power - Max | 106W (Tc) |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | SiCPAK F |
| Packaging | Tray |
| Standard Pack Qty | 48 |
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The G3F18MT12FB4 from GeneSiC Semiconductor falls under the mosfet modules category. This part is specified with technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 53A (Tc) and rds on (max) @ id, vgs: 24mOhm @ 45A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. G3F18MT12FB4 is available through Simplytronix, sourced and verified for authenticity.