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BC850BE6327HTSA1 Infineon Technologies
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BC850BE6327HTSA1

Mfr. No: BC850BE6327HTSA1
Mfr.: Infineon Technologies
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN SilicnAF TRNSTRS
Lifecycle: Last Time Buy
Datasheet: BC850BE6327HTSA1 Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 330 mW
Frequency - Transition 250MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging BC 850B E6327
Suggested Replacement
2,017
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541210075
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The BC850BE6327HTSA1, made by Infineon Technologies, belongs to the transistors product category. Among its key specs are transistor type: NPN, current, collector (ic): 100 mA, voltage, collector emitter breakdown: 45 V, vce saturation (max) @ ib, ic: 600mV @ 5mA, 100mA, current, collector cutoff: 15nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 200 @ 2mA, 5V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks BC850BE6327HTSA1 for same-day shipping with genuine parts guaranteed.

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