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BCW68FE6327HTSA1 Infineon Technologies
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BCW68FE6327HTSA1

Mfr. No: BCW68FE6327HTSA1
Mfr.: Infineon Technologies
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Lifecycle: Last Time Buy
Datasheet: BCW68FE6327HTSA1 Datasheet (PDF)
⚙ Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V
Power - Max 330 mW
Frequency - Transition 200MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging BCW 68F E6327
Suggested Replacement
10,073
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541210075
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Manufactured by Infineon Technologies, the BCW68FE6327HTSA1 is classified under transistors. Among its key specs are transistor type: PNP, current, collector (ic): 800 mA, voltage, collector emitter breakdown: 45 V, vce saturation (max) @ ib, ic: 700mV @ 50mA, 500mA, current, collector cutoff: 20nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 100 @ 100mA, 1V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Get BCW68FE6327HTSA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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