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BFR740L3RHE6327XTSA1 Infineon Technologies
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BFR740L3RHE6327XTSA1

Mfr. No: BFR740L3RHE6327XTSA1
Mfr.: Infineon Technologies
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicn Germanium RF Transistor
Lifecycle: Last Time Buy
Datasheet: BFR740L3RHE6327XTSA1 Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4.7V
Frequency - Transition 42GHz
Noise Figure (dB Typ @ f) 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain 24.5dB
Power - Max 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA, 3V
Current - Collector (Ic) (Max) 30mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package PG-TSLP-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 15000
🔁 Alternate / Replacement Parts
Alternate Packaging BFR 740L3RH E6327
Suggested Replacement
14,419
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 84 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210075
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Manufactured by Infineon Technologies, the BFR740L3RHE6327XTSA1 is classified under rf bipolar transistors. Notable characteristics of this part include transistor type: NPN, voltage, collector emitter breakdown: 4.7V, frequency, transition: 42GHz, noise figure: 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz, gain: 24.5dB and power, max: 160mW. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Get BFR740L3RHE6327XTSA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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