*For representation only.
BFR843EL3E6327XTSA1
| Mfr. No: | BFR843EL3E6327XTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors RF BIP TRANSISTORS |
| Lifecycle: | Last Time Buy |
| Datasheet: | BFR843EL3E6327XTSA1 Datasheet (PDF) |
⚙
Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.6V |
| Frequency - Transition | - |
| Gain | 25.5dB |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 55mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | PG-TSLP-3-10 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 15000 |
3,237
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 84 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210075 |
| JPHTS | 8541290100 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
The BFR843EL3E6327XTSA1 from Infineon Technologies falls under the rf bipolar transistors category. This component is defined by transistor type: NPN, voltage, collector emitter breakdown: 2.6V, frequency, transition: -, gain: 25.5dB, power, max: 125mW and current, collector (ic): 55mA. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. BFR843EL3E6327XTSA1 is available through Simplytronix, sourced and verified for authenticity.
