| Mfr. No: | DF17MR12W1M1HFB68BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules CoolSiC MOSFET booster module 1200 V |
| Lifecycle: | Active |
| Datasheet: | DF17MR12W1M1HFB68BPSA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 149 nC @ 18 V |
| Vgs (Max) | +20V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | - |
| Package / Case | Module |
| Packaging | Tray |
| Standard Pack Qty | 24 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's DF17MR12W1M1HFB68BPSA1 is a widely used discrete semiconductor modules part in electronic designs. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 45A (Tj), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 16.2mOhm @ 50A, 18V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies DF17MR12W1M1HFB68BPSA1 with same-day shipping and guaranteed authenticity.