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DF419MR20W3M1HFB11BPSA1 Infineon Technologies
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DF419MR20W3M1HFB11BPSA1

Mfr. No: DF419MR20W3M1HFB11BPSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2000 V, 60 A Boost EasyPACK 3B CoolSiC MOSFET Module
Lifecycle: Active
Datasheet: DF419MR20W3M1HFB11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 4 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C 50A (Tj)
Rds On (Max) @ Id, Vgs 26.5mOhm @ 60A, 18V
Vgs(th) (Max) @ Id 5.15V @ 34mA
Gate Charge (Qg) (Max) @ Vgs 234nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 7240pF @ 1200V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY3B
📦 Product Attributes
Packaging Tray
Standard Pack Qty 8
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,138
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 70 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541210000
USHTS 8541210095
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The DF419MR20W3M1HFB11BPSA1, made by Infineon Technologies, belongs to the discrete semiconductor modules product category. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 4 N-Channel, FET feature: -, drain to source voltage: 2000V (2kV), current, continuous drain (id) @ 25°C: 50A (Tj) and rds on (max) @ id, vgs: 26.5mOhm @ 60A, 18V. This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks DF419MR20W3M1HFB11BPSA1 for same-day shipping with genuine parts guaranteed.

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