| Mfr. No: | DF419MR20W3M1HFB11BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules 2000 V, 60 A Boost EasyPACK 3B CoolSiC MOSFET Module |
| Lifecycle: | Active |
| Datasheet: | DF419MR20W3M1HFB11BPSA1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 4 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 2000V (2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tj) |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 60A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 34mA |
| Gate Charge (Qg) (Max) @ Vgs | 234nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 7240pF @ 1200V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY3B |
| Packaging | Tray |
| Standard Pack Qty | 8 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 70 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
The DF419MR20W3M1HFB11BPSA1, made by Infineon Technologies, belongs to the discrete semiconductor modules product category. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 4 N-Channel, FET feature: -, drain to source voltage: 2000V (2kV), current, continuous drain (id) @ 25°C: 50A (Tj) and rds on (max) @ id, vgs: 26.5mOhm @ 60A, 18V. This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks DF419MR20W3M1HFB11BPSA1 for same-day shipping with genuine parts guaranteed.