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F411MR12W3M1HB11BPSA1 Infineon Technologies
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F411MR12W3M1HB11BPSA1

Mfr. No: F411MR12W3M1HB11BPSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC
Lifecycle: Active
Datasheet: F411MR12W3M1HB11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 75A (Tj)
Rds On (Max) @ Id, Vgs 16mOhm @ 75A, 18V
Vgs(th) (Max) @ Id 5.15V @ 30mA
Gate Charge (Qg) (Max) @ Vgs 223nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 8
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,249
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 70 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The F411MR12W3M1HB11BPSA1 from Infineon Technologies falls under the discrete semiconductor modules category. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 4 N-Channel, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 75A (Tj) and rds on (max) @ id, vgs: 16mOhm @ 75A, 18V. This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. F411MR12W3M1HB11BPSA1 is available through Simplytronix, sourced and verified for authenticity.

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