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FF06MR12A04MA2AKSA1 Infineon Technologies
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FF06MR12A04MA2AKSA1

Mfr. No: FF06MR12A04MA2AKSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules HybridPACK DSC S module with SiC MOSFET and NTC
Datasheet: FF06MR12A04MA2AKSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 190A
Rds On (Max) @ Id, Vgs 5.56mOhm @ 190A, 18V
Vgs(th) (Max) @ Id 4.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs 420nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 10100pF @ 850V
Power - Max 20mW
Operating Temperature -40°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Package / Case 11-PowerDIP Module (2.091", 53.10mm)
Supplier Device Package PG-MDIP-11-1
📦 Product Attributes
Packaging Tube
Standard Pack Qty 120
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,115
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 308 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

FF06MR12A04MA2AKSA1 is a discrete semiconductor modules component manufactured by Infineon Technologies. This part is specified with technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 190A and rds on (max) @ id, vgs: 5.56mOhm @ 190A, 18V. This part has a typical lead time of 308 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers FF06MR12A04MA2AKSA1 in stock, verified authentic and ready for same-day dispatch.

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