| Mfr. No: | FF17MR12W1M1HB70BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules Half-bridge 1200 V module with CoolSiC MOSFET |
| Datasheet: | FF17MR12W1M1HB70BPSA1 Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | - |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | - |
| Operating Temperature | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY1B |
| Packaging | Tray |
| Standard Pack Qty | 24 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 231 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
Infineon Technologies manufactures the FF17MR12W1M1HB70BPSA1, a discrete semiconductor modules part used in electronic assemblies. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: -, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 231 Days from factory and ships with a full manufacturer datasheet available for download. You can source FF17MR12W1M1HB70BPSA1 through Simplytronix, with fast shipping and verified authenticity.