| Mfr. No: | FF3MR12KM1HHPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules CoolSiC MOSFET half bridge module 1200 V |
| Lifecycle: | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.44mOhm @ 280A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 112mA |
| Gate Charge (Qg) (Max) @ Vgs | 800nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 24200pF @ 800V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-62MMHB |
| Packaging | Tray |
| Standard Pack Qty | 10 |
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 98 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
As a mosfet modules component, the FF3MR12KM1HHPSA1 is manufactured and supplied by Infineon Technologies. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 190A (Tc), rds on (max) @ id, vgs: 4.44mOhm @ 280A, 18V and vgs(th) (max) @ id: 5.1V @ 112mA. This part has a typical lead time of 98 Days from factory. Simplytronix carries FF3MR12KM1HHPSA1 in stock, backed by a genuine parts guarantee and quick dispatch.